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BFU610F
NPN wideband silicon RF transistor
Rev. 2 -- 11 January 2011 Product data sheet
1. Product profile
1.1 General description
NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.
CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards.
1.2 Features and benefits
Low noise high gain microwave transistor Noise figure (NF) = 1.7 dB at 5.8 GHz High associated gain 13.5 dB at 5.8 GHz 40 GHz fT silicon technology
1.3 Applications
Low current battery equipped applications Low noise amplifiers for microwave communications systems Analog/digital cordless applications RKE AMR GPS ZigBee LTE, cellular, UMTS FM radio Mobile TV Bluetooth
NXP Semiconductors
BFU610F
NPN wideband silicon RF transistor
1.4 Quick reference data
Table 1. VCBO VCEO VEBO IC Ptot hFE CCBS fT Gp(max) NF Quick reference data Conditions open emitter open base open collector Tsp 90 C IC = 1 mA; VCE = 2 V; Tj = 25 C VCB = 2 V; f = 1 MHz IC = 4 mA; VCE = 2 V; f = 2 GHz; Tamb = 25 C IC = 5 mA; VCE = 2 V; f = 5.8 GHz; Tamb = 25 C IC = 2 mA; VCE = 2 V; f = 5.8 GHz; S = opt; Tamb = 25 C IC = 10 mA; VCE = 1.5 V; ZS = ZL = 50 ; f = 5.8 GHz; Tamb = 25 C
[2] [1]
Symbol Parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current total power dissipation DC current gain collector-base capacitance transition frequency maximum power gain noise figure
Min 90 -
Typ 2 135 19 15 17.0 1.7
Max 16 5.5 2.5 10 136 180 -
Unit V V V mA mW
fF GHz dB dB
PL(1dB)
output power at 1 dB gain compression
-
3
-
dBm
[1] [2]
Tsp is the temperature at the solder point of the emitter lead. Gp(max) is the maximum power gain, if K > 1. If K < 1 then Gp(max) = Maximum Stable Gain (MSG).
2. Pinning information
Table 2. Pin 1 2 3 4 Discrete pinning Description emitter base emitter collector
1, 3 2 1
mbb159
Simplified outline
3 4
Graphic symbol
4 2
3. Ordering information
Table 3. Ordering information Package Name BFU610F Description plastic surface-mounted flat pack package; reverse pinning; 4 leads Version SOT343F Type number
BFU610F
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(c) NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 -- 11 January 2011
2 of 12
NXP Semiconductors
BFU610F
NPN wideband silicon RF transistor
4. Marking
Table 4. BFU610F Marking Marking D1* Description * = p : made in Hong Kong * = t : made in Malaysia * = w : made in China Type number
5. Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VCBO VCEO VEBO IC Ptot Tstg Tj
[1]
Parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current total power dissipation storage temperature junction temperature
Conditions open emitter open base open collector Tsp 90 C
[1]
Min -65 -
Max 16 5.5 2.5 10 136 +150 150
Unit V V V mA mW C C
Tsp is the temperature at the solder point of the emitter lead.
6. Thermal characteristics
Table 6. Symbol Rth(j-sp) Thermal characteristics Parameter thermal resistance from junction to solder point Conditions Typ 440 Unit K/W
200 Ptot (mW) 150
001aam802
100
50
0 0 40 80 120 Tsp (C) 160
Fig 1.
BFU610F
Power derating curve
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Product data sheet
Rev. 2 -- 11 January 2011
3 of 12
NXP Semiconductors
BFU610F
NPN wideband silicon RF transistor
7. Characteristics
Table 7. Characteristics Tj = 25 C unless otherwise specified Symbol V(BR)CBO V(BR)CEO IC ICBO hFE CCES CEBS CCBS fT Gp(max) Parameter collector-base breakdown voltage collector-emitter breakdown voltage collector current collector-base cut-off current DC current gain collector-emitter capacitance emitter-base capacitance collector-base capacitance transition frequency maximum power gain IE = 0 mA; VCB = 8 V IC = 1 mA; VCE = 2 V VCB = 2 V; f = 1 MHz VEB = 0.5 V; f = 1 MHz VCB = 2 V; f = 1 MHz IC = 4 mA; VCE = 2 V; f = 2 GHz; Tamb = 25 C IC = 5 mA; VCE = 2 V; Tamb = 25 C f = 1.5 GHz f = 1.8 GHz f = 2.4 GHz f = 5.8 GHz |s21|2 insertion power gain IC = 5 mA; VCE = 2 V; Tamb = 25 C f = 1.5 GHz f = 1.8 GHz f = 2.4 GHz f = 5.8 GHz NF noise figure IC = 2 mA; VCE = 2 V; S = opt; Tamb = 25 C f = 1.5 GHz f = 1.8 GHz f = 2.4 GHz f = 5.8 GHz Gass associated gain IC = 2 mA; VCE = 2 V; S = opt; Tamb = 25 C f = 1.5 GHz f = 1.8 GHz f = 2.4 GHz f = 5.8 GHz PL(1dB) output power at 1 dB gain compression IC = 10 mA; VCE = 1.5 V; ZS = ZL = 50 ; Tamb = 25 C f = 1.5 GHz f = 1.8 GHz f = 2.4 GHz f = 5.8 GHz 3.5 3 3 3 dBm dBm dBm dBm 23.5 23 20.5 13.5 dB dB dB dB 0.9 0.95 1.1 1.7 dB dB dB dB 17.5 17 16 10.5 dB dB dB dB
[1]
Conditions IC = 2.5 A; IE = 0 mA IC = 1 mA; IB = 0 mA
Min Typ 16 5.5 90 2 135 187 227 19 15
Max Unit 10 100 180 fF fF fF GHz V V mA nA
-
26 25 24 17
-
dB dB dB dB
BFU610F
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(c) NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 -- 11 January 2011
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NXP Semiconductors
BFU610F
NPN wideband silicon RF transistor
Table 7. Characteristics ...continued Tj = 25 C unless otherwise specified Symbol IP3 Parameter third-order intercept point Conditions IC = 10 mA; VCE = 1.5 V; ZS = ZL = 50 ; Tamb = 25 C f = 1.5 GHz f = 1.8 GHz f = 2.4 GHz f = 5.8 GHz
[1] Gp(max) is the maximum power gain, if K > 1. If K < 1 then Gp(max) = MSG.
Min Typ
Max Unit
-
14.5 15 15 18
-
dBm dBm dBm dBm
10 IC (mA) 8
001aam803
200 hFE
001aam804
(1) (2)
150
6
(3)
100 4
(4) (5)
50 2
(6)
0 0 1 2 3 4 VCE (V) 5
0 0 2 4 6 8 IC (mA) 10
Tamb = 25 C. (1) IB = 60 A (2) IB = 50 A (3) IB = 40 A (4) IB = 30 A (5) IB = 20 A (6) IB = 10 A
VCE = 2 V; Tamb = 25 C.
Fig 2.
Collector current as a function of collector-emitter voltage; typical values
Fig 3.
DC current gain as a function of collector current; typical values
BFU610F
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(c) NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 -- 11 January 2011
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NXP Semiconductors
BFU610F
NPN wideband silicon RF transistor
40 CCBS (fF) 30
001aam805
20 fT (GHz) 15
001aam806
20
10
10
5
0 0 4 8 VCB (V) 12
0 0 5 10 15 IC (mA) 20
f = 1 MHz, Tamb = 25 C.
VCE = 2 V; f = 2 GHz; Tamb = 25 C.
Fig 4.
Collector-base capacitance as a function of collector-base voltage; typical values
30 MSG G (dB) 20
Fig 5.
Transition frequency as a function of collector current; typical values
001aam807
Gp(max)
(1) (2) (3) (4)
10
(5)
0 0 5 10 15 IC (mA) 20
VCE = 2 V; Tamb = 25 C. (1) f = 1.5 GHz (2) f = 1.8 GHz (3) f = 2.4 GHz (4) f = 5.8 GHz (5) f = 12 GHz
Fig 6.
Gain as a function of collector current; typical value
BFU610F
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(c) NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 -- 11 January 2011
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NXP Semiconductors
BFU610F
NPN wideband silicon RF transistor
50 G (dB) 40
001aam808
50 G (dB) 40
001aam809
30 MSG 20 Gp(max) 10 |S21|2 0 0 5 10 15 20 f (GHz) 25
30 MSG
20
Gp(max) |S21|2
10
0 0 5 10 15 20 f (GHz) 25
VCE = 2 V; IC = 1 mA; Tamb = 25 C.
VCE = 2 V; IC = 5 mA; Tamb = 25 C.
Fig 7.
3 NFmin (dB) 2
Gain as a function of frequency; typical values
001aam810
Fig 8.
2.0 NFmin (dB) 1.5
Gain as a function of frequency; typical values
001aam811
(2) (3) (4) (1)
1.0
1 0.5
0 0 2 4 6 8 IC (mA) 10
0 0 2 4 f (GHz) 6
VCE = 2 V; Tamb = 25 C. (1) f = 5.8 GHz (2) f = 2.4 GHz (3) f = 1.8 GHz (4) f = 1.5 GHz
VCE = 2 V; IC = 2 mA; Tamb = 25 C.
Fig 9.
Minimum noise figure as a function of collector current; typical values
Fig 10. Minimum noise figure as a function of frequency; typical values
BFU610F
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(c) NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 -- 11 January 2011
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NXP Semiconductors
BFU610F
NPN wideband silicon RF transistor
8. Package outline
Plastic surface-mounted flat pack package; reverse pinning; 4 leads SOT343F
D
A
E
y
HE
X
e
3 4
A c Lp w
M
2
1
w
M
A
bp e1
b1
A
detail X
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A max 0.75 0.65 bp 0.4 0.3 b1 0.7 0.5 c 0.25 0.10 D 2.2 1.8 E 1.35 1.15 e 1.3 e1 1.15 HE 2.2 2.0 Lp 0.48 0.38 w 0.2 y 0.1
OUTLINE VERSION SOT343F
REFERENCES IEC JEDEC JEITA
EUROPEAN PROJECTION
ISSUE DATE 05-07-12 06-03-16
Fig 11. Package outline SOT343F
BFU610F All information provided in this document is subject to legal disclaimers. (c) NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 -- 11 January 2011
8 of 12
NXP Semiconductors
BFU610F
NPN wideband silicon RF transistor
9. Abbreviations
Table 8. Acronym AMR DC DRO FM GPS Ka LTE NPN RF RKE UMTS Abbreviations Description Automatic Meter Reading Direct Current Dielectric Resonator Oscillator Frequency Modulation Global Positioning System Kurtz above Long Term Evolution Negative-Positive-Negative Radio Frequency Remote Keyless Entry Universal Mobile Telecommunications System
10. Revision history
Table 9. Revision history Release date 20110111 20100617 Data sheet status Product data sheet Objective data sheet Change notice Supersedes BFU610F v.1 Document ID BFU610F v.2 BFU610F v.1
BFU610F
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(c) NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 -- 11 January 2011
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NXP Semiconductors
BFU610F
NPN wideband silicon RF transistor
11. Legal information
11.1 Data sheet status
Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
[1] [2] [3]
Please consult the most recently issued document before initiating or completing a design. The term `short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
11.2
Definitions
Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification -- The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet.
malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer's sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer's applications and products planned, as well as for the planned application and use of customer's third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer's applications or products, or the application or use by customer's third party customer(s). Customer is responsible for doing all necessary testing for the customer's applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer's third party customer(s). NXP does not accept any liability in this respect. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer's general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control -- This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities.
(c) NXP B.V. 2011. All rights reserved.
11.3
Disclaimers
Limited warranty and liability -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors' aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or
BFU610F
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Product data sheet
Rev. 2 -- 11 January 2011
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NXP Semiconductors
BFU610F
NPN wideband silicon RF transistor
liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors' standard warranty and NXP Semiconductors' product specifications. Quick reference data -- The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.
Non-automotive qualified products -- Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors' warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors' specifications such use shall be solely at customer's own risk, and (c) customer fully indemnifies NXP Semiconductors for any
11.4
Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.
12. Contact information
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com
BFU610F
All information provided in this document is subject to legal disclaimers.
(c) NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 -- 11 January 2011
11 of 12
NXP Semiconductors
BFU610F
NPN wideband silicon RF transistor
13. Contents
1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 11.1 11.2 11.3 11.4 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information. . . . . . . . . . . . . . . . . . . . . 11 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'.
(c) NXP B.V. 2011.
All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 11 January 2011 Document identifier: BFU610F

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